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Fall Time: 2.1 ns, 3.3 ns
Rise Time: 1.5 ns, 2.1 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 2.9 nC, 3.5 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 870 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 1.8 ns, 1.6 ns
Typical Turn-Off Delay Time: 4.1 ns, 5.9 ns
Id - Continuous Drain Current: 1 A, 850 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.6 S, 1.2 S
Rds On - Drain-Source Resistance: 700 mOhms, 1.45 Ohms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V
