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Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Fall Time: 10.6 ns, 10 ns
Rise Time: 4.1 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 20.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.1 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.5 ns
Typical Turn-Off Delay Time: 26.2 ns, 35 ns
Id - Continuous Drain Current: 4.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 75 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
