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Fall Time: 2.9 ns, 7.5 ns
Rise Time: 2.3 ns, 2.8 ns
Technology: Si
Unit Weight: 13 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3.9 nC, 6.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 1.7 ns, 1.5 ns
Typical Turn-Off Delay Time: 6.6 ns, 11.3 ns
Id - Continuous Drain Current: 3.7 A, 2.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.5 S, 2.48 S
Rds On - Drain-Source Resistance: 100 mOhms, 280 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
