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Diodes Incorporated MMST3904Q-7-F BJTs - Bipolar Transistors 60V NPN 40Vceo 200mA 200mW

Name: Diodes Incorporated MMST3904Q-7-F BJTs - Bipolar Transistors 60V NPN 40Vceo 200mA 200mW
Brand: Diodes Incorporated

ModelMMST3904Q-7-F

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Technology: Si

Unit Weight: 5 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV