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Width: 1.3 mm
Height: 1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 300 at 10 mA, 2 V
Gain Bandwidth Product fT: 110 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 12 V
Continuous Collector Current: - 2.5 A
Maximum DC Collector Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 180 mV
