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Technology: Si
Unit Weight: 10 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.8 W
DC Current Gain hFE Max: 550 at 10 mA, 2 V
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 8 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 4 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250 at 10 mA, 2 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 240 mV
