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Width: 3.95 mm
Height: 1.5 mm
Length: 4.95 mm
Fall Time: 137.9 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 47.5 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.82 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 13.2 ns
Typical Turn-Off Delay Time: 302.7 ns
Id - Continuous Drain Current: 10.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 26 S
Rds On - Drain-Source Resistance: 15 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
