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Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 870 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 260 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.8 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
