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Width: 0.6 mm
Height: 0.35 mm
Length: 1 mm
Technology: Si
Unit Weight: 3 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Id - Continuous Drain Current: 300 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1.2 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
