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Width: 1.3 mm
Height: 1 mm
Length: 2.15 mm
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 1.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5.4 S
Rds On - Drain-Source Resistance: 88 mOhms
Vds - Drain-Source Breakdown Voltage: 28 V
Vgs th - Gate-Source Threshold Voltage: 620 mV
