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Width: 3 mm
Height: 0.8 mm
Length: 3 mm
Fall Time: 2 ns, 2 ns
Rise Time: 3.3 ns, 3.3 ns
Technology: Si
Unit Weight: 10 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 9.9 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.78 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3 ns, 3 ns
Typical Turn-Off Delay Time: 10.6 ns, 10.6 ns
Id - Continuous Drain Current: 5.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 45 mOhms, 45 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
