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Width: 3.5 mm
Height: 1.6 mm
Length: 6.5 mm
Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 125
Gain Bandwidth Product fT: 160 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 45 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 90 at 3 A, 1 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 550 mV
