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Fall Time: 8.7 ns, 13.5 ns
Rise Time: 15 ns, 4.9 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 11.7 nC, 11.4 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 11.2 ns, 7.5 ns
Typical Turn-Off Delay Time: 17.5 ns, 28.2 ns
Id - Continuous Drain Current: 6 A, 4.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 25 mOhms, 50 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
