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Fall Time: 9.9 ns, 11.6 ns
Rise Time: 3.4 ns, 7.9 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 300 pC, 280 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 450 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.9 ns, 5.5 ns
Typical Turn-Off Delay Time: 15.7 ns, 10.6 ns
Id - Continuous Drain Current: 500 mA, 360 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 80 mS, 50 mS
Rds On - Drain-Source Resistance: 1.7 Ohms, 4 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
