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Fall Time: 10.7 ns, 14.3 ns
Rise Time: 12.4 ns, 14.1 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 12.9 nC, 14 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.2 ns, 2.3 ns
Typical Turn-Off Delay Time: 13.8 ns, 25.1 ns
Id - Continuous Drain Current: 7.2 A, 5.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 22.8 S, 16.6 S
Rds On - Drain-Source Resistance: 18 mOhms, 39 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
