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Fall Time: 18.8 ns, 19 ns
Rise Time: 3.5 ns, 8.8 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.4 nC, 1.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 310 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.8 ns, 5.7 ns
Typical Turn-Off Delay Time: 25.2 ns, 35 ns
Id - Continuous Drain Current: 650 mA, 450 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 200 mOhms, 360 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV, 2.6 V
