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Width: 6.2 mm
Height: 2.39 mm
Length: 6.7 mm
Fall Time: 6.3 ns
Rise Time: 6.6 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 17.4 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.75 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 2.5 ns
Typical Turn-Off Delay Time: 19 ns
Id - Continuous Drain Current: 9.4 A, 6.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.5 S
Rds On - Drain-Source Resistance: 32 mOhms, 53 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 2.2 V
