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Fall Time: 10.54 ns, 19.2 ns
Rise Time: 7.28 ns, 4.3 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 500 pC, 850 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 450 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V, - 8 V, + 8 V
Typical Turn-On Delay Time: 4.06 ns, 8.5 ns
Typical Turn-Off Delay Time: 13.74 ns, 20.2 ns
Id - Continuous Drain Current: 1.03 A, 700 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 300 Ohms, 670 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 1 V
