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Diodes Incorporated BSS138Q-7-F MOSFETs 50V N-Ch Enh FET 20Vgss 300Pd 200mA

Name: Diodes Incorporated BSS138Q-7-F MOSFETs 50V N-Ch Enh FET 20Vgss 300Pd 200mA
Brand: Diodes Incorporated

ModelBSS138Q-7-F

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Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 mS

Rds On - Drain-Source Resistance: 3.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 500 mV