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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 300 at 10 V, 2 mA
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 20 V
DC Collector/Base Gain hfe Min: 15 at 10 V, 2 mA
Collector-Emitter Saturation Voltage: 300 mV
