Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 120 at 1 V, 10 mA
Gain Bandwidth Product fT: 400 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 30 V
DC Collector/Base Gain hfe Min: 35 at 1 V, 10 mA
Collector-Emitter Saturation Voltage: 500 mV
