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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 400 at 10 V, 2 mA
Gain Bandwidth Product fT: 350 MHz
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 25 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 10 V, 100 uA
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 500 mV
