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Vgs(th): 1.4 V
Vgs (Max): 12V
Gate Charge (Qg): 11nC
Power consumption: 1.2W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 6.9A
Input Capacitance (Ciss): 580pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 30mOhm
Drive Voltage (Max Rds On, Min Rds On): 2.5|10V
