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Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 300 mA
Rds On - Drain-Source Resistance: 1.4 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
