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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 60 at 150 mA, 10 V
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 120 V
DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 1.5 V
