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Central Semiconductor 2N657A TIN/LEAD BJTs - Bipolar Transistors 100Vcbo 100Vceo 6.0Vebo 10uA 20pF

Name: Central Semiconductor 2N657A TIN/LEAD BJTs - Bipolar Transistors 100Vcbo 100Vceo 6.0Vebo 10uA 20pF
Brand: Central Semiconductor

Model2N657A TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 90

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 2 V