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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 100 at 1200 mA, 2 V
Gain Bandwidth Product fT: 1 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 65 V
DC Collector/Base Gain hfe Min: 20 at 1200mA, 2 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 750 mV
