Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 10 W
DC Current Gain hFE Max: 175 at 500 mA, 4 V
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 2 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 30 at 500 mA, 4 V
Collector- Emitter Voltage VCEO Max: 75 V
Collector-Emitter Saturation Voltage: 500 mV
