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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 250
Gain Bandwidth Product fT: 2 GHz
Emitter- Base Voltage VEBO: 2.5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 400 mV
