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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 600 at 5 V, 1 mA
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 45 V
DC Collector/Base Gain hfe Min: 150 at 5 V, 1 mA
Collector-Emitter Saturation Voltage: 350 mV
