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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 250 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 600 mV
