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Central Semiconductor 2N3110 TIN/LEAD BJTs - Bipolar Transistors NPN 80Vcbo 40Vceo 7.0Vebo 25pF

Name: Central Semiconductor 2N3110 TIN/LEAD BJTs - Bipolar Transistors NPN 80Vcbo 40Vceo 7.0Vebo 25pF
Brand: Central Semiconductor

Model2N3110 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 250 mV