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Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Technology: Si
Unit Weight: 540 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Gain Bandwidth Product fT: 200 MHz
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 20 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 300 at 1 mA, 200 at 10 uA
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 50 mV
