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Technology: Si
Unit Weight: 666 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 4 P-Channel
Number of Channels: 4 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 80 mA
Maximum Operating Temperature: + 70 C
Minimum Operating Temperature: 0 C
Rds On - Drain-Source Resistance: 1.14 kOhms
Vds - Drain-Source Breakdown Voltage: 8 V
Vgs th - Gate-Source Threshold Voltage: 180 mV
